-1 V Bias 67 GHz Bandwidth Si-Contacted Germanium Waveguide p-i-n Photodetector for 56 Gbps Optical Links

We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the Cband and O-band. 2015 Optical Society of America OCIS codes: (230.5160) Photodetectors; (130.3120) Integrated optics devices; (250.0520) Optoelectronics; (200.4650) Optical interconnects. References and links 1. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit,D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon on-Insulator substrate,” Opt. Exp., 15(21), 13965 (2007). 2. L. Vivien, J. Osmond, J. M. F ́ed ́eli, D. Marris-Morini, P. Crozat, J. F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Exp., 17(8), 6252 (2009). 3. D. Feng, S. Liao, P. Dong, N. Feng, H. Liang, D. Zheng, C. Kung, J. Fong, R. Shafilha, J. Cunningham, A. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large crosssection silicon-on-insulator waveguide,” Appl. Phys. Lett., 95(26), 261105 (2009). 4. S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Exp., 19(11), 10967 (2011). 5. C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultracompact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Exp., 19 (25), 24897 (2011). 6. L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. F ́ed ́eli, “Zerobias 40Gbit/s germanium waveguide photodetector on silicon,” Opt. Exp., 20 (2), 1096 (2012). 7. G. Li, Y. Luo, X. Zheng, G. Masini, A. Mekis, S.Sahni, H. Thacker, J. Yao, I. Shubin, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “Improving CMOS-compatible germanium photodetectors,” Opt. Exp., vol. 20, no. 24, pp. 26345–26350, 2012. 8. A. Novack, M. Gould, Y. Yang, Z. Xuan, M. Streshinsky, Y. Liu, G. Capellini, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “Germanium photodetector with 60 GHz bandwidth using inductive gain peaking,” Opt. Exp., 21 (23), 28387 (2013). 9. T.-Y. Liow, N. Duan, A. E.-J. Lim, X. Tu, M. Yu, and G.-Q. Lo, “Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure,” presented at the Opt. Fiber Commun. Conf., San Francisco, CA, USA, 2014, Paper M2G.6. 10. Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. BaehrJones, and M. Hochberg, “A high responsivity photodetector absent metal-germanium direct contact,” Opt. Exp., 22 (9), 11367 (2014). 11. H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts,” J. Lightwave Technol., 2367134 (2014). 12. R. Going, T. J. Seok, J. Loo, K. Hsu, M. C. Wu “Germanium wrap-around photodetectors on Silicon photonics,” Opt. Exp., 23 (9), 11975 (2015). 13. S. Lischke, D. Knoll, C. Mai, L. Zimmermann, A. Peczek, M. Kroh, A. Trusch, E. Krune, K. Voigt, and A. Mai, “High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode,” Opt. Exp., 23 (21), 27213 (2015). 14. M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” ECOC Conference 2013, London, United Kingdom, We.3.B.2. 15. P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013). 16. P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” presented at the Integr. Photon. Res., Silicon Nanophoton. Conf., 2014, Paper IW3A.4.